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參數(shù)資料
| 型號： | SI4392DY-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qg, Fast Switching WFET |
| 中文描述： | N溝道減少Q(mào)g和快速切換WFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 55K |
| 代理商： | SI4392DY-E3 |
FEATURES
Extremely Low Q
gd
WFET Technology for
Switching Losses
TrenchFET Power MOSFET
100% R
g
Tested
APPLICATIONS
High-Side DC/DC Conversion
Notebook
Server
Si4392DY
Vishay Siliconix
Document Number: 72151
S-41427—Rev. D, 26-Jul-04
www.vishay.com
1
N-Channel Reduced Q
g
, Fast Switching WFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.00975 @ V
GS
= 10 V
0.01375 @ V
GS
= 4.5 V
12.5
10.0
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4392DY
Si4392DY-T1 (with Tape and Reel)
Si4392DY—E3 (Lead (Pb)-Free)
Si4392DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
a
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
12.5
T
A
= 70 C
10
A
Pulsed Drain Current
I
DM
50
Continuous Source Current (Diode Conduction)
a
I
S
2.7
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.0
W
T
A
= 70 C
1.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
THERMAL RESISTANCE RATINGS
a
Parameter
Typical
Maximum
Unit
Maximum Junction-to-Ambient
R
thJA
33
42
C/W
Maximum Junction-to-Foot (Drain)
R
thJF
16
20
Notes
a.
Surface Mounted on 1” x 1” FR4 Board, t
10 sec
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4392DY-T1 | N-Channel Reduced Qg, Fast Switching WFET |
| SI4392DY-T1-E3 | N-Channel Reduced Qg, Fast Switching WFET |
| SI4392DY | N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss |
| SI4394DY | N-Channel Reduced Qdg, Fast Switching WFET |
| SI4394DY-E3 | N-Channel Reduced Qdg, Fast Switching WFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4392DY-T1 | 功能描述:MOSFET 30V 12.5A 3.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4392DY-T1-E3 | 功能描述:MOSFET 30V 12.5A 3.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4394DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4394DY_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4394DY-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Reduced Qdg, Fast Switching WFET |
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