參數(shù)資料
型號: Si3460DV-T1
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 20-V (D-S) MOSFET
中文描述: N溝道20 - V(下局副局長)MOSFET的
文件頁數(shù): 1/4頁
文件大?。?/td> 65K
代理商: SI3460DV-T1
FEATURES
TrenchFET Power MOSFET
100% R
g
Tested
Si3460DV
Vishay Siliconix
Document Number: 71329
S-31725—Rev. b, 18-Aug-03
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.027 @ V
GS
= 4.5 V
0.032 @ V
GS
= 2.5 V
0.038 @ V
GS
= 1.8 V
6.8
20
6.3
5.7
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information: Si3460DV-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.8
5.1
T
A
= 70 C
5.4
4.1
A
Pulsed Drain Current
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
W
T
A
= 70 C
1.3
0.73
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
45
62.5
Steady State
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
25
30
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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