參數(shù)資料
型號: SI3459DV
廠商: Vishay Intertechnology,Inc.
英文描述: Static Protection Wrist Grounder; Features:For use with Type 725 3M Wrist Strap Monitor; Four (29.4, 40.2, 4.99 & 11.5 MOhm) 1% 1/4W metal film resistor test plugs and case RoHS Compliant: NA
中文描述: P通道60 - V(下局副局長)MOSFET的
文件頁數(shù): 1/4頁
文件大小: 62K
代理商: SI3459DV
Si3459DV
Vishay Siliconix
New Product
Document Number: 70877
S-49635—Rev. B, 29-Nov-99
www.vishay.com FaxBack 408-970-5600
2-1
P-Channel 60-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
–60
0.220 @ V
GS
= –10 V
2.2
0.310 @ V
GS
= –4.5 V
1.9
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
I
D
2.2
A
T
A
= 70 C
1.7
Pulsed Drain Current
I
DM
10
Single Avalanche Current (L = 0.1 mH)
I
AS
–7
Maximum Power Dissipation
a, b
T
A
= 25 C
P
D
2
W
T
A
= 70 C
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
5 sec
R
thJA
62.5
C/W
Steady State
106
Maximum Junction-to-Lead
Steady State
R
thJL
35
Notes
a.
b.
Surface Mounted on FR4 Board.
t
5 sec
相關PDF資料
PDF描述
SI3460DV N-Channel 20-V (D-S) MOSFET
Si3460DV-T1 N-Channel 20-V (D-S) MOSFET
SI3467DV P-Channel 20-V (D-S) MOSFET, Low-Threshold
Si3467DV-T1-E3 P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI3469DV P-Channel 20-V (D-S) MOSFET, Low-Threshold
相關代理商/技術參數(shù)
參數(shù)描述
SI3459DV-T1 功能描述:MOSFET 60V 2.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI3459DV-T1-E3 功能描述:MOSFET 60V 2.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI3459DV-T1-GE3 功能描述:MOSFET 60V 2.2A 2.0W 200mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI3460 制造商:SILABS 制造商全稱:SILABS 功能描述:IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER
SI3460BDV 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET