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參數(shù)資料
| 型號： | Si3456BDV-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | COOLER FOR TO-220 20 WATTS |
| 中文描述： | N溝道30 V的（副）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 74K |
| 代理商： | SI3456BDV-T1-E3 |
FEATURES
TrenchFET Power MOSFET
100% R
g
Tested
Si3456BDV
Vishay Siliconix
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.035 @ V
GS
= 10 V
0.052 @ V
GS
= 4.5 V
6.0
4.9
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information: Si3456BDV-T1—E3
Marking Code:
6Bxxx
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.0
4.5
T
A
= 70 C
4.8
3.6
A
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
W
T
A
= 70 C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
55
62.5
Steady State
92
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
28
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| SI3456BDV | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI3456DV | N-Channel PowerTrench MOSFET |
| SI3457BDV | P-Channel 30-V (D-S) MOSFET |
| SI3457BDV-T1 | P-Channel 30-V (D-S) MOSFET |
| SI3457BDV-T1-E3 | P-Channel 30-V (D-S) MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI3456BDV-T1-GE3 | 功能描述:MOSFET 30V 6.0A 2.0W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3456CDV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI3456CDV-T1-E3 | 功能描述:MOSFET 30V 7.8A 3.3W 34mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3456CDV-T1-GE3 | 功能描述:MOSFET 30V 7.8A 3.3W 34mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3456-C-GU | 制造商:Silicon Laboratories Inc 功能描述:SI3456-C-GU - Bulk |
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