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參數(shù)資料
| 型號(hào)： | SI3455ADV-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SI3455ADV-T1 |
Si3455ADV
Vishay Siliconix
www.vishay.com
2
Document Number: 71090
S-40424—Rev. C, 15-Mar-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30 V, V
GS
= 0 V
1
A
V
DS
=
30 V, V
GS
= 0 V, T
J
= 85 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
=
10 V
20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
10 V, I
D
=
3.5 A
0.080
0.100
V
GS
=
4.5 V, I
D
=
2.7 A
0.140
0.170
Forward Transconductance
a
g
fs
V
DS
=
15
V, I
D
=
3.5 A
6
S
Diode Forward Voltage
a
V
SD
I
S
=
1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
8.5
13
Gate-Source Charge
Q
gs
V
DS
=
15 V,
V
GS
=
10 V, I
D
=
3.5 A
2.2
nC
Gate-Drain Charge
Q
gd
1.5
Turn-On Delay Time
t
d(on)
10
20
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
=
10 V, R
g
= 6
7
15
Turn-Off Delay Time
t
d(off)
I
D
20
35
ns
Fall Time
t
f
10
20
Source-Drain Reverse Recovery Time
t
rr
I
F
=
1.7 A, di/dt = 100 A/ s
30
60
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
4
8
12
16
20
0
1
2
3
4
5
6
7
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 10 thru 7 V
T
C
=
55 C
125 C
4 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
3 V
5 V
6 V
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