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參數(shù)資料
| 型號(hào)： | SI3441 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | P溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | SI3441 |
Si3441BDV
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72028
S-03669—Rev. B, 07-Apr-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-0.45
-0.85
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20 V, V
GS
= 0 V
-1
A
V
DS
= -20 V, V
GS
= 0 V, T
J
= 70 C
-5
On State Drain Current
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V
-10
A
V
DS
= -5 V, V
GS
= -2.5 V
-4
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -4.5 V, I
D
= -3.3 A
0.070
0.090
V
GS
= -2.5 V, I
D
= -2.9 A
0.098
0.130
Forward Transconductance
a
g
fs
V
DS
= -10
V, I
D
= -3.3 A
8.0
S
Diode Forward Voltage
a
V
SD
I
S
= -1.6 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
5.2
8.0
Gate-Source Charge
Q
gs
V
DS
= -10 V,
V
GS
= -4.5 V, I
D
= -3.3 A
0.8
nC
Gate-Drain Charge
Q
gd
1.5
Turn-On Delay Time
t
d(on)
15
25
Rise Time
t
r
V
= -10 V, R
= 10
-1.0 A, V
GEN
= -4.5 V, R
G
= 6
55
85
Turn-Off Delay Time
t
d(off)
I
D
30
45
ns
Fall Time
t
f
40
60
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.6 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4
8
12
16
20
0
1
2
3
4
5
V
GS
= 4.5 thru 3.5 V
T
C
= -55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1 V
2 V
3 V
2.5 V
1.5 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3441BDV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET |
| SI3441BDV | 制造商:Vishay Siliconix 功能描述:MOSFET P TSOP-6 |
| SI3441BDV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET |
| SI3441BDV-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET |
| SI3441BDV-T1-E3 | 功能描述:MOSFET 20V 2.9A 0.09Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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