VBAT Supply Curren" />
參數(shù)資料
型號: SI3230M-E-FM
廠商: Silicon Laboratories Inc
文件頁數(shù): 2/108頁
文件大小: 0K
描述: IC SLIC PROG 1-CH 38QFN
標準包裝: 364
系列: ProSLIC®
功能: 用戶線路接口概念(SLIC)
接口: SPI
電路數(shù): 1
電源電壓: 3.13 V ~ 5.25 V
電流 - 電源: 88mA
功率(瓦特): 700mW
安裝類型: 表面貼裝
封裝/外殼: 38-VFQFN 裸露焊盤
供應商設備封裝: 38-QFN(5x7)
包裝: 托盤
包括: DTMF 生成和解碼,F(xiàn)SK 生成
Si3230
10
Preliminary Rev. 0.96
Not
Recommended
fo
r N
ew
D
esi
gn
s
VBAT Supply Current
3
IBAT
Sleep (RESET = 0)
0
mA
Open (DCOF = 1)
0
mA
Active on-hook
VOC = 48 V, ETBO = 4 mA
3
mA
Active OHT
ETBO = 4 mA
11
mA
Active off-hook
ETBA = 4 mA, ILIM = 20 mA
30
mA
Ground-start
2
mA
Ringing
VPK_RING = 56 VPK,
sinewave ringing, REN = 1
—5.5
mA
Notes:
1. VDDD, VDDA = 3.3 V.
2. VDDD, VDDA = 5.25 V.
3. IBAT = current from VBAT (the large negative supply). For a switched-mode power supply regulator efficiency of 71%,
the user can calculate the regulator current consumption as IBAT VBAT/(0.71 VDC).
Table 9. Switching Characteristics—General Inputs
VDDA = VDDA = 3.13 to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade, CL = 20 pF)
Parameter
Symbol
Min
Typ
Max
Unit
Rise Time, RESET
tr
——
20
ns
RESET Pulse Width
trl
100
ns
Note: All timing (except Rise and Fall time) is referenced to the 50% level of the waveform. Input test levels are VIH = VD
0.4 V, VIL = 0.4 V. Rise and Fall times are referenced to the 20% and 80% levels of the waveform.
Table 8. Power Supply Characteristics (Continued)
(VDDA,VDDD = 3.13 V to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Symbol
Test Condition
Typ1
Typ2
Max
Unit
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