(VDDA
參數(shù)資料
型號： SI3216MPPTX-EVB
廠商： Silicon Laboratories Inc
文件頁數(shù)： 31/122頁
文件大?。?/td> 0K
描述： BOARD EVAL W/DISCRETE INTERFACE
標(biāo)準(zhǔn)包裝： 1
Si3216
16
Rev. 1.0
Not
Recommended
fo
r N
ew
D
esi
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s
Table 6. Monitor ADC Characteristics
(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Differential Nonlinearity
(6-bit resolution)
DNLE
–1/2
—
1/2
LSB
Integral Nonlinearity
(6-bit resolution)
INLE
–1
—
1
LSB
Gain Error (voltage)
—
10
%
Gain Error (current)
—
20
%
Table 7. Si321x DC Characteristics, VDDA =VDDD =5.0 V
(VDDA, VDDD = 4.75 to 5.25 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input Voltage
VIH
0.7 x VDDD
——
V
Low Level Input Voltage
VIL
——
0.3 x VDDD
V
High Level Output Voltage
VOH
DIO1,DIO2,SDITHRU:IO =–4mA
SDO, DTX:IO =–8 mA
VDDD – 0.6
—
V
DOUT: IO = –40 mA
VDDD – 0.8
—
V
Low Level Output Voltage
VOL
DIO1,DIO2,DOUT,SDITHRU:
IO =4 mA
SDO,INT,DTX:IO =8 mA
——
0.4
V
Input Leakage Current
IL
–10
—
10
A
Table 8. Si321x DC Characteristics, VDDA =VDDD =3.3 V
(VDDA, VDDD = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input Voltage
VIH
0.7 x VDDD
——
V
Low Level Input Voltage
VIL
——
0.3 x VDDD
V
High Level Output Voltage
VOH
DIO1,DIO2,SDITHRU:IO =–2mA
SDO, DTX:IO =–4mA
VDDD – 0.6
—
V
DOUT: IO =–40 mA
VDDD – 0.8
—
V
Low Level Output Voltage
VOL
DIO1,DIO2,DOUT,SDITHRU:
IO =2mA
SDO,INT,DTX:IO =4mA
——
0.4
V
Input Leakage Current
IL
–10
—
10
A
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