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參數(shù)資料
型號(hào)： SI3012-KS
廠商： Silicon Laboratories Inc
文件頁(yè)數(shù)： 9/64頁(yè)
文件大?。?/td> 0K
描述： IC LINE-SIDE DAA 16SOIC
標(biāo)準(zhǔn)包裝： 48
系列： ISOcap™
數(shù)據(jù)格式： V.90
電源電壓： 3.3 V ~ 5 V
安裝類型： 表面貼裝
封裝/外殼： 16-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SOIC N
包裝： 管件
Si3038
Rev. 2.01
17
Bill of Materials
Table 16. Global Component Values—Si3038 Chipset
Component1
Value
Supplier(s)
C1,C4
150 pF, 3 kV, X7R,±20%
Novacap, Venkel, Johanson, Murata, Panasonic
C2,C11,C23,C28,C29,C31,C32
Not Installed
C3
0.22
F, 16 V, X7R,±20%
Novacap, Venkel, Johanson, Murata, Panasonic
C5
0.1 F, 50 V, Elec/Tant, ±20%
C6,C10,C16
0.1 F, 16 V, X7R, ±20%
C7,C8
560 pF, 250 V, X7R, ±20%
Novacap, Johanson, Murata, Panasonic
C9
10 nF, 250 V, X7R, ±20%
C12
0.22 F, 16 V, Tant, ±20%
C13
0.47 F, 16 V, X7R, ±20%
C14
0.68 F, 16 V, X7R/Elec/Tant, ±20%
C18,C19
3.9 nF, 16 V, X7R, ±20%
C20
0.01 F, 16 V, X7R, ±20%
C22
1800 pF, 50 V, X7R, ±20%
C24,C252
1000 pF, 3 kV, X7R, ±10%
C303
Not Installed
C34,C354
33 pF, 16 V, NPO, ±5%
D1,D25
Dual Diode, 300 V, 225 mA
Central Semiconductor
D3,D4
BAV99 Dual Diode, 70 V, 350 mW
Diodes Inc., OnSemiconductor, Fairchild
FB1,FB2
Ferrite Bead
Murata
L1,L26
330 mH, 120 mA, DCR <3
, ±10%
Toko
Q1,Q3
A42, NPN, 300 V
OnSemiconductor, Fairchild
Q2
A92, PNP, 300 V
OnSemiconductor, Fairchild
Q47
BCP56T1, NPN, 60 V, 1/2 W
OnSemiconductor, Fairchild
RV1
Sidactor, 275 V, 100 A
Teccor, ST Microelectronics, Microsemi, TI
RV28
Not Installed
R1,R4,R21,R22,R23
Not Installed
R2
402
, 1/16 W, ±1%
R3
Not Installed
R5
36 k
, 1/16 W, ±5%
R6
120 k
, 1/16 W, ±5%
R7,R8,R15,R16,R17,R199
4.87 k
, 1/4 W, ±1%
R9,R10
56 k
, 1/10 W, ±5%
R11
10 k
, 1/16 W, ±1%
R12
78.7
, 1/16 W, ±1%
R13
215
, 1/16 W, ±1%
R18
2.2 k
, 1/10 W, ±5%
R24
150
, 1/16 W, ±5%
R27,R28
10
, 1/10 W, ±5%
R29
Not Installed
R30
0
, 1/10 W
U1
Si3024
Silicon Labs
U2
Si3014
Silicon Labs
Y14
24.576 MHz, 18 pF, 50 ppm
Z1
Zener Diode, 43 V, 1/2 W
Vishay, OnSemiconductor, Rohm
Z4,Z5
Zener Diode, 5.6 V, 1/2 W
Diodes Inc., OnSemiconductor, Fairchild
Notes:
1.
The following reference designators were intentionally omitted: C15, C17, C21, C26, C27, C31–C33, R14, and R20.
2.
Y2 class capacitors are needed for the Nordic requirements of EN60950 and may also be used to achieve surge performance of 5 kV or better.
3.
Install only if needed for improved radiated emissions performance (10 pF, 16 V, NPO, ±10%).
4.
Y1, C34, and C35 should be installed if the Si3024 is configured as a primary device.
5.
Several diode bridge configurations are acceptable (suppliers include General Semi., Diodes Inc.)
6.
See Appendix B for additional considerations.
7.
Q4 may require copper on board to meet 1/2 W power requirement. (Contact transistor manufacturer for details.)
8.
RV2 can be installed to improve performance from 2500 V to 3500 V for multiple longitudinal surges (270 V, MOV).
9.
The R7, R8, R15 and R16, R17, R19 resistors may each be replaced with a single resistor of 1.62 k
, 3/4 W, ±1%.
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