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參數(shù)資料
| 型號： | SI2341DS-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 43K |
| 代理商： | SI2341DS-T1 |
Si2341DS
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= -10 A
-30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1.0
-3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V
-1
A
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55 C
-10
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -10 V
-6
A
Drain Source On Resistance
Drain-Source On-Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -2.8 A
0.057
0.072
V
GS
= -4.5 V, I
D
= -2.0 A
0.090
0.120
Forward Transconductance
a
g
fs
V
DS
= -5 V, I
D
= -2.8 A
8.0
S
Diode Forward Voltage
V
SD
I
S
= -0.75 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
9.5
15
Gate-Source Charge
Q
gs
V
DS
= -15 V, V
= -10 V
I
D
-2.8 A
1.5
nC
Gate-Drain Charge
Q
gd
2.5
Input Capacitance
C
iss
400
Output Capacitance
C
oss
V
DS
= -15 V, V
GS
= 0, f = 1 MHz
95
pF
Reverse Transfer Capacitance
C
rss
70
Switching
c
Turn On Time
Turn-On Time
t
d(on)
7
15
t
r
V
DD
= -15 V, R
L
=15
-1 0 A V
= -4 5 V
I
D
-1.0 A, V
GEN
= -4.5 V
R
G
= 6
15
25
ns
Turn-Off Time
t
d(off)
20
30
t
f
20
30
Notes
a.
b.
c.
Pulse test: PW
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature. FaxBack 408-970-5600
300 s duty cycle
2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI2341DS-T1-E3 | 功能描述:MOSFET 30V 2.8A 0.9W 72 mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2341DS-T1-GE3 | 功能描述:MOSFET 30V 2.8A 0.9W 72mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2342DS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 8 V (D-S) MOSFET |
| SI2342DS-T1-GE3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R 制造商:Vishay Siliconix 功能描述:SI2342DS-T1-GE3 - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 8V SOT-23 制造商:Vishay Intertechnologies 功能描述:N-CHANNEL 8-V (D-S) MOSFET |
| SI2343CDS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30 V (D-S) MOSFET |
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