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參數(shù)資料
| 型號(hào)： | SI2312DS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 58K |
| 代理商： | SI2312DS |
Si2312DS
Vishay Siliconix
www.vishay.com
2
Document Number: 71338
S-31990—Rev. D, 13-Oct-03
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(
BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 C
V
DS
10 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 5.0 A
V
GS
= 2.5 V, I
D
= 4.5 A
V
GS
= 1.8 V, I
D
= 4.0 A
V
DS
= 15 V, I
D
= 5.0 A
I
S
= 1.0 A, V
GS
= 0 V
20
V
Gate-Threshold Voltage
0.45
0.65
0.85
Gate-Body Leakage
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
1
A
75
On-State Drain Current
a
I
D(on)
15
A
0.027
0.033
Drain-Source On-Resistance
a
r
DS(on)
0.033
0.040
0.042
0.051
Forward Transconductance
a
g
fs
V
SD
40
S
Diode Forward Voltage
Dynamic
b
0.8
1.2
V
Total Gate Charge
Q
g
Q
gs
Q
gd
11.2
14.0
Gate-Source Charge
V
= 10 V, V
= 4.5 V, I
= 5.0 A
DS
GS
1.4
nC
Gate-Drain Charge
D
2.2
Switching
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
15
25
Rise Time
V
= 10 V, R
= 10
1.0 A, V
GEN
= 4.5 V, R
G
= 6
40
60
Turn-Off Delay Time
I
D
48
70
ns
Fall-Time
31
45
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.0 A, di/dt = 100 A/ s
13
25
Notes
a.
b.
Pulse test: PW
Guaranteed by design, not subject to production testing.
300 s duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
3
6
9
12
15
0.0
0.5
1.0
1.5
2.0
0
3
6
9
12
15
0
1
2
3
4
V
GS
= 4.5 thru 2.0 V
T
C
= 125 C
-55 C
1.5 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1.0 V
0.5 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2312DS_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20 -V (D-S) MOSFET |
| SI2312DST1 | 制造商:VISHAY 功能描述:MOSFET TRANSISTOR |
| SI2312DS-T1 | 功能描述:MOSFET 20V 3.77A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2312DS-T1-E3 | 功能描述:MOSFET 20V 3.77A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2312DS-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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