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參數(shù)資料
| 型號： | SI2302ADS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel MOSFET, 20V(D-S) |
| 中文描述： | N溝道MOSFET，20V（D-S） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | SI2302ADS |
Si2302ADS
Vishay Siliconix
www.vishay.com
2
Document Number: 71831
S-41772—Rev. D, 20-Sep-04
SPECIFICATIONS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(
BR)DSS
V
GS
= 0 V, I
D
= 10
m
A
20
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 50
m
A
0.65
0.95
1.2
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
m
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55
_
C
10
On State Drain Current
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
6
A
V
DS
≥
5 V, V
GS
= 2.5 V
4
Drain-Source On-Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 3.6 A
0.045
0.060
b
V
GS
= 2.5 V, I
D
= 3.1 A
0.070
0.115
Forward Transconductance
a
g
fs
V
DS
= 5 V, I
D
= 3.6 A
8
S
Diode Forward Voltage
V
SD
I
S
= 0.94 A, V
GS
= 0 V
0.76
1.2
V
Dynamic
Total Gate Charge
Q
g
4.0
10
Gate-Source Charge
Q
gs
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3.6 A
0.65
nC
Gate-Drain Charge
Q
gd
1.5
Input Capacitance
C
iss
300
Output Capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
120
pF
Reverse Transfer Capacitance
C
rss
80
Switching
Turn-On Delay Time
t
d(on)
7
15
Rise Time
t
r
V
= 10 V, R
= 2.8
I
D
3.6 A, V
GEN
= 4.5 V, R
g
= 6
55
80
ns
Turn-Off Delay Time
t
d(off)
16
60
Fall-Time
t
f
10
25
Notes
a.
b.
Pulse test: PW
≤
300
m
s duty cycle
≤
2%.
Effective for production 10/04.
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| Si2307BDS | P-Channel 30-V (D-S) MOSFET |
| SI2307DS | P-Channel 30-V (D-S) MOSFET |
| SI2312DS | N-Channel 20-V (D-S) MOSFET |
| SI2312DS-T1 | N-Channel 20-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2302ADS-T1 | 功能描述:MOSFET 20V 2.4A 0.7W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2302ADS-T1-E3 | 功能描述:MOSFET 20V 2.4A 0.06Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2302ADS-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI2302ADS-T1-GE3 | 功能描述:MOSFET 20V 2.4A 0.9W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2302CDS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
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