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參數(shù)資料
| 型號： | SHD374651 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 50 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SHD-3HP, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 31K |
| 代理商： | SHD374651 |
2010 Sensitron Semiconductor
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5160, REV. -
LOW DROP SILICON RECTIFIER
DESCRIPTION: 200V 50A Hermetic low drop rectifier in a SHD-3 HP package.
Features:
Designed for Battery Cell Bypass application
Low package inductance
High Surge Capacity
Available with SX or SXV screening
Maximum Ratings:
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
Electrical Characteristics:
SHD374651
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
Max. Average Forward Current
IF(AV)
-
50
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
300
A
Maximum Thermal Resistance
RθJC
1.0
°C/W
Max. Junction Temperature
TJ
-
-65 to +175
°C
Max. Storage Temperature
Tstg
--65 to +175
°C
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 5A, Pulse, TJ = 25 °C
0.850
V
VF2
@ 10A, Pulse, TJ = 25 °C
0.875
V
VF3
@ 25A, Pulse, TJ = 25 °C
0.915
V
VF4
@ 50A, Pulse, TJ = 25 °C
0.965
V
VF5
@ 100A, Pulse, TJ = 25 °C
1.025
V
VF6
@ 5A, Pulse, TJ = -55 °C
0.940
V
VF7
@ 10A, Pulse, TJ = -55 °C
0.965
V
VF8
@ 25A, Pulse, TJ = -55 °C
1.040
V
VF9
@ 50A, Pulse, TJ = -55 °C
1.090
V
VF10
@ 5A, Pulse, TJ = 125 °C
0.715
V
VF11
@ 10A, Pulse, TJ = 125 °C
0.750
V
VF12
@ 25A, Pulse, TJ = 125°C
0.815
V
VF13
@ 50A, Pulse, TJ = 125 °C
0.865
V
Max. Reverse Current
IR1
@VR = 200V, Pulse,
TJ = 25 °C
10
μA
IR2
@VR = 200V, Pulse,
TJ = 125 °C
0.5
mA
Max. Junction Capacitance
CT
@VR = 10V, TC = 25 °C
fSIG = 1MHz,
VSIG = 100mV (p-p)
400
pF
Max. Reverse Recovery Time
tRR
IF = 0.5A, IR = 1A, IRR = 0.25A, TJ
= 25
°C
2
s
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