- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄40170 > SHD620112P (SENSITRON SEMICONDUCTOR) 20 A, SILICON CARBIDE, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號： | SHD620112P |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, SILICON CARBIDE, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC-5, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SHD620112P |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4179, REV. B
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-5 PACKAGE
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
SCREENED VERSIONS ARE AVAILABLE
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC = 65
OC, for
Single Package)
IO
10
Amps
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC = 65
OC, for
Dual Package)
IO
20
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) TC = 25
OC
IFRM
50
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURREN
(t = 10
μs, pulse) T
C = 25
OC
IFSM
250
Amps
MAXIMUM POWER DISSIPATION, TC = 25
OC
Pd
20
W
MAXIMUM THERMAL RESISTANCE, Junction to Case
RθJC
1.8
°C/W
MAXIMUM OPERATING TEMPERATURE RANGE
Top
-55 to
+200
°C
MAXIMUM STORAGE TEMPERATURE RANGE
Tstg
-55 to
+200
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP (If = 10A) Vf
TJ = 25 °C
TJ = 175 °C
1.6
2.5
1.8
3.0
Volts
MAXIMUM REVERSE CURRENT (1200V PIV) Ir
TJ = 25 °C
TJ=175 °C
0.01
0.02
0.20
1.00
mA
MAXIMUM JUNCTION CAPACITANCE (Vr =400V)
CT
70
PF
TOTAL CAPACITIVE CHARGE (VR=1200V IF=10A di/dt=500A/μs TJ=25°C) QC
60
N/A
nC
SHD620112
SHD620112P
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SHD626052N | 5 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA |
| SHD626052 | 5 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA |
| SHD674122 | 20 A, SILICON CARBIDE, RECTIFIER DIODE |
| SHD674122B | 20 A, SILICON CARBIDE, RECTIFIER DIODE |
| SHD95KP13CAT1 | 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SHD620150 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC SILICON CARBIDE RECTIFIER |
| SHD620150P | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC SILICON CARBIDE RECTIFIER |
| SHD625051 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC SILICON CARBIDE RECTIFIER |
| SHD625051_10 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC SILICON CARBIDE RECTIFIER |
| SHD625051D | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC SILICON CARBIDE RECTIFIER |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。