參數(shù)資料
型號： SGS23N60UF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： CONNECTOR ACCESSORY
中文描述： 23 A, 600 V, N-CHANNEL IGBT
封裝： TO-220F, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 594K
代理商： SGS23N60UF
2001 Fairchild Semiconductor Corporation
April 2001
SGS23N60UFD Rev. A
IGBT
S
SGS23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 12A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 42ns (typ.)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGS23N60UFD
600
±
20
23
12
92
12
92
73
29
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
I
FM
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
1.7
1.2
62.5
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
G
C
E
TO-220F
G C E
相關(guān)PDF資料
PDF描述
SGS5N150 General Description
SGS5N150UF General Description
SGS5N60RUFD Short Circuit Rated IGBT
SGS5N60RUF FEEDTHRU CAPACITOR, 22PF 0.5A 100VFEEDTHRU CAPACITOR, 22PF 0.5A 100V; Capacitance:0.022nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, +:50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
SGS6N60 Ultra-Fast IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGS23N60UFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT
SGS23N60UFDTU 功能描述:IGBT 晶體管 600V/12A/w/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGS23N60UFTU 功能描述:IGBT 晶體管 600V/12A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGS35DB070D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HALF BRIDGE NPN DARLINGTON POWER MODULE
SGS-5-10 制造商:SYNERGY 制造商全稱:SYNERGY MICROWAVE CORPORATION 功能描述:DOUBLE-BALANCED MICROWAVE MIXER SURFACE WIDE BANDWIDTH - GALAXY SERIES 3 - 19 GHz
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