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參數(shù)資料
| 型號(hào)： | SGL41-60-HE3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, MELF-2 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | SGL41-60-HE3/61T |
Document Number 88548
26-Jun-06
www.vishay.com
3
BYM13-20 thru BYM13-60, SGL41-20 thru SGL41-60
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
0.1
0.01
50
SGL41-20 - SGL41-40
SGL41-50 & SGL41-60
Pulse Width = 300 s
1 % Duty Cycle
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
0
20
40
60
80
100
1
10
100
0.1
0.01
0.001
SGL41-20 - SGL41-40
SGL41-50 & SGL41-60
Tj = 125 °C
Tj = 25 °C
Tj = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
Figure 5. Typical Junction Capacitance
1
10
100
40
0.1
SGL41-20 - SGL41-40
SGL41-50 & SGL41-60
400
100
10
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
SOLDERABLE ENDS
1st BAND
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
D1=
0.105
0.095
(2.67)
(2.41)
D2=D1
+0
-0.008 (0.20)
1st band denotes type and positive end (cathode)
D2
0.022 (0.56)
0.018 (0.46)
DO-213AB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SGL41-50-HE3/5AT | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB |
| SGL41-30-E3/46 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-213AB |
| SGL41-60-E3/61T | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB |
| SGL41-60-E3/51 | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB |
| SGL41-40-E3/5AT | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-213AB |
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