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參數(shù)資料
| 型號： | SGL41-60-HE3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, MELF-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | SGL41-60-HE3/61T |
Vishay General Semiconductor
BYM13-20 thru BYM13-60, SGL41-20 thru SGL41-60
Document Number 88548
26-Jun-06
www.vishay.com
1
Surface Mount Schottky Barrier Rectifier
FEATURES
MELF Schottky rectifier
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 250 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
MECHANICAL DATA
Case: DO-213AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Two bands indicate cathode end 1st band
denotes device type 2nd band denotes voltage type
DO-213AB
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V to 60 V
IFSM
30 A
VF
0.50 V, 0.70 V
Tj max.
125 °C, 150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYM13-20 BYM13-30 BYM13-40 BYM13-50 BYM13-60
UNIT
Denotes Schottky devices: 1st band is orange
SGL41-20
SGL41-30
SGL41-40
SGL41-50
SGL41-60
Polarity color bands (2nd band) voltage type
Gray
Red
Orange
Yellow
Green
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current (see Fig.
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
30
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 55 to + 125
- 55 to + 150
°C
Storage temperature range
TSTG
- 55 to + 150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SGL41-50-HE3/5AT | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB |
| SGL41-30-E3/46 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-213AB |
| SGL41-60-E3/61T | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB |
| SGL41-60-E3/51 | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB |
| SGL41-40-E3/5AT | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-213AB |
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