參數(shù)資料
型號: SGF80N60UF
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: CONNECTOR ACCESSORY
中文描述: 80 A, 600 V, N-CHANNEL IGBT
封裝: TO-3PF, 3 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 567K
代理商: SGF80N60UF
2001 Fairchild Semiconductor Corporation
October 2001
SGF80N60UF Rev. A
IGBT
S
SGF80N60UF
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.1 V @ I
C
= 40A
High Input Impedance
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGF80N60UF
600
±
20
80
40
220
110
45
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
P
D
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ.
--
--
Max.
1.1
40
Units
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G C E
G
C
E
TO-3PF
相關(guān)PDF資料
PDF描述
SGH10N120RUF Short Circuit Rated IGBT
SGH10N120RUFD Short Circuit Rated IGBT
SGH10N60RUFD Short Circuit Rated IGBT(短路電流額定的絕緣柵雙極晶體管(IGBT))
SGH13N60UFD 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness
SGH15N60RUFD Short Circuit Rated IGBT(短路電流額定的絕緣柵雙極晶體管(IGBT))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGF80N60UFTU 功能描述:IGBT 晶體管 Discrete Hi-P IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGF9 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For C to X-band Local Oscillator and Amplifier
SGFEB1024-120-NA 制造商:TRANSITION NETWORKS 功能描述:Transition Stand-Alone - Media converter - 10Base-T, 1000Base-LX, 100Base-TX, 10
SGFHCB-36M0000000 功能描述:VCXO振蕩器 36MHz 100ppm 0C +70C RoHS:否 制造商:Fox 封裝 / 箱體:5 mm x 3.2 mm 頻率:19.2 Mhz 頻率穩(wěn)定性:2.5 PPM 輸出格式: 封裝:Reel 電源電壓:3 V 端接類型:SMD/SMT 尺寸:3.2 mm W x 5 mm L x 1.5 mm H 最小工作溫度:- 20 C 最大工作溫度:+ 75 C
SGFHEA-24.000MHZ 制造商:VTI Technologies 功能描述:CRYSTAL OSCILLATOR, CLOCK, 24 MHZ, CMOS/TTL OUTPUT