參數(shù)資料
型號(hào)： SGH15N60RUFD
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Short Circuit Rated IGBT(短路電流額定的絕緣柵雙極晶體管(IGBT))
中文描述： 24 A, 600 V, N-CHANNEL IGBT
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/7頁
文件大?。?/td> 649K
代理商： SGH15N60RUFD
2000 Fairchild Semiconductor International
March 2000
SGH15N60RUFD Rev. A
IGBT
S
SGH15N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD
series provides low conduction and switching losses as well
as short circuit ruggedness. RUFD series is designed for
the applications such as motor control, UPS and general
inverters where short-circuit ruggedness is required.
Features
Short Circuit rated 10us @ T
C
= 100
°
C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.2 V @ I
C
= 15A
High Input Impedance
CO-PAK, IGBT with FRD : t
rr
= 42ns (typ.)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGH15N60RUFD
600
±
20
24
15
45
15
160
10
160
64
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
us
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
I
FM
T
SC
P
D
@ T
C
= 100
°
C
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
0.77
0.7
40
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G C E
TO-3P
G
C
E
相關(guān)PDF資料
PDF描述
SGH15N60 Short Circuit Rated IGBT
SGH15N60RUF Short Circuit Rated IGBT
SGH20N60RUFD Short Circuit Rated IGBT(短路電流額定的絕緣柵雙極晶體管(IGBT))
SGH23N60UF CONNECTOR ACCESSORY
SGH25N120 Short Circuit Rated IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGH15N60RUFDTU 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGH15N60RUFTU 功能描述:IGBT 晶體管 600V/15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGH20N120RUF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH20N120RUFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH20N120RUFDTU 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*