參數(shù)資料
型號(hào)： SGB15N60HS
廠商： INFINEON TECHNOLOGIES AG
英文描述： High Speed IGBT in NPT-technology
中文描述： 在不擴(kuò)散核武器條約高高速IGBT的技術(shù)
文件頁(yè)數(shù)： 3/11頁(yè)
文件大小： 325K
代理商： SGB15N60HS
^
SGB15N60HS
Power Semiconductors
3
Rev 2.1 Jan 05
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
13
14
209
15
0.32
0.21
0.53
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
=23
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=60nH,
1)
=40pF
mJ
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
11
6
72
26
0.38
0.20
0.58
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
= 3.6
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=60nH,
1)
=40pF
mJ
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
-
-
-
-
-
-
-
12
15
235
17
0.48
0.30
0.78
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
= 23
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=60nH,
1)
=40pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to test circuit in Figure E.
相關(guān)PDF資料
PDF描述
SGB20N60 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
SGP20N60 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
SGW20N60 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
SGB30N60 Fast IGBT in NPT-technology
SGW30N60 CAP 0.1UF 50V 10% X7R AXIAL TR-14
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGB15N60HS_06 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology
SGB15N60HSATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 27A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 27A 138W TO263-3
SGB15N60HSATMA2 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 27A 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel
SGB15UF 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB15UFSMS 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*