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for use in life-support devices and/or systems.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103095 Rev E
Sirenza Microdevices’ SGB-6433 is a high performance
SiGe HBT MMIC amplifier utilizing a Darlington configura-
tion with an active bias network. The active bias network
provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply the
SGB-6433 does not require a drop resistor as compared to
typical Darlington amplifiers. This robust amplifier features
a Class 1C ESD rating, low thermal resistance , and
unconditional stability. The SGB-6433 product is designed
for high linearity 5V gain block applications that require
small size and minimal external components. It is on chip
matched to 50 ohm and an external bias inductor choke is
required for the application band.
Functional Block Diagram
Key Specifications
Symbol
Parameters: Test Conditions
Z
0
= 50
, V
CC
= 5.0V, Ic =88mA, T
= 30oC)
Frequency of Operation
Unit
Min.
Typ.
Max.
f
O
MHz
DC
3500
S
21
Small Signal Gain – 850MHz
dB
20.0
Small Signal Gain – 1950MHz
14.5
16.0
17.5
Small Signal Gain – 2400MHz
15.0
P
1dB
Output Power at 1dB Compression – 850MHz
dBm
18.5
Output Power at 1dB Compression – 1950MHz
16.5
18.5
Output Power at 1dB Compression – 2400MHz
17.5
OIP3
Output IP3 – 850MHz
33.0
Output IP3 – 1950MHz
dB
28.5
31.0
Output IP3 – 2400MHz
31.0
IRL
Input Return Loss @1950MHz
dB
12.0
15
ORL
Output Return Loss @1950MHz
dB
8.5
11.5
Ic
Current
mA
76
88
98
NF
Noise Figure @1950MHz
dB
4.1
5.1
R
th, j-l
Thermal Resistance (junction - lead)
oC/W
60
SGB-6433
DC–3.5 GHz Active Bias Gain Block
Product Features
High reliability SiGe HBT Technology
Robust Class 1C ESD
Simple and small size
P1dB = 18.5 dBm @ 1950MHz
IP3 = 31 dBm @ 1950MHz
Low Thermal Resistance = 60 C/W
Applications
5V applications
LO buffer amp
RF pre-driver and RF receive path
Product Description
V
NC
NC
G
N
NC
NC
V
N
N
NC
RFIN
NC
RFOUT
N
N
Active
Bias