參數(shù)資料
型號: SFF11N80
廠商: Solid States Devices, Inc.
英文描述: 11 AMP / 800 Volts 0.95 ヘ N-Channel MOSFET
中文描述: 11放大器/ 800伏特,0.95ヘN溝道MOSFET
文件頁數(shù): 1/3頁
文件大小: 155K
代理商: SFF11N80
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF11N80 __ __ __
Package
3/
M = TO-254
Lead Option
3/
__
= Straight Leads
DB = Down Bend
UB = Up Bend
Screening
2/
__
= Not Screen
TX = TX Level
TXV = TXV Level
S = S Level
Z = TO-254Z
SFF11N80 Series
11 AMP / 800 Volts
0.95
N-Channel MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed, Isolated Package
Ceramic Seal Package Available. Contact Factory
TX, TXV, S-Level screening available
Replacement for IXTH11N80 Types
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
V
DS
800
Volts
Gate – Source Voltage
V
GS
±20
Volts
Continues Collector Current
I
D
11
Amps
Power Dissipation
T
C
= 25oC
T
C
= 55oC
P
D
150
114
W
Operating & Storage Temperature
Top & Tstg
-55 to +175
oC
Maximum Thermal Resistance
Junction to Case
R
θ
JC
0.83
oC/W
TO-254 (M)
TO-254Z (Z)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00213C
DOC
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