參數(shù)資料
型號(hào): SFF130-5
廠商: Solid States Devices, Inc.
英文描述: 8 AMP / 100 Volts 0.18OHM N-Channel POWER MOSFET
中文描述: 8放大器/ 100伏特0.18OHM N溝道功率MOSFET
文件頁數(shù): 1/2頁
文件大小: 181K
代理商: SFF130-5
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF130 __ __
Screening
2/
__
= Not Screen
TX = TX Level
TXV = TXV Level
S = S Level
Package
/5= TO-5
TO-5
SFF130/5
8 AMP / 100 Volts
0.18
N-Channel Power MOSFET
Features:
Rugged Construction with Poly Silicon Gate
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Package
Available in both hot case and isolated versions
Ideal for low power applications
TX, TXV, Space Level Screening Available
2/
Replacement for IRFF130 Types
Maximum Ratings
3/
Symbol
Value
Units
Drain – Source Voltage
V
DS
V
GS
100
Volts
Gate – Source Voltage
±20
Volts
Continuous Collector Current
T
C
= 25oC
T
C
= 100oC
T
C
= 25oC
T
A
= 25oC
I
D
8
5
25
19
Amps
Power Dissipation
P
D
Watts
Operating & Storage Temperature
Top & Tstg
-55 to +150
oC
Thermal Resistance
Junction to Case
Single Pulse Avalanche Energy
R
θ
JC
5
oC/W
E
AS
75
mJ
TO-5 Case Outline:
NOTES:
1/
For Ordering Information, Price, Operating
Curves, and Availability- Contact Factory.
2/
Screened to MIL-PRF-19500.
3/
Unless Otherwise Specified, All Maximum
Ratings and Electrical Characteristics @25oC.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00019D
DOC
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