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參數(shù)資料
| 型號(hào)： | SF10JGT |
| 廠商： | DIODES INC |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 84K |
| 代理商： | SF10JGT |
DS24012 Rev. A1-2
1 of 2
SF10AG - SF10JG
www.diodes.com
Diodes Incorporated
SF10AG - SF10JG
1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
A
B
C
D
DO-41
Dim
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Glass Passivated Die Construction
Diffused Junction
Super-Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.3 grams (approx.)
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SF10
AG
SF10
BG
SF10
CG
SF10
DG
SF10
FG
SF10
GG
SF10
HG
SF10
JG
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
150
200
300
400
500
600
V
RMS Reverse Voltage
VR(RMS)
35
70
105
140
210
280
350
420
V
Average Rectified Output Current
@ TA = 75
°C
(Note 1)
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
30
A
Forward Voltage
@ IF = 1.0A
VFM
0.95
1.3
1.5
V
Peak Reverse Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 100
°C
IRM
10
100
mA
Reverse Recovery Time (Note 3)
trr
35
40
50
ns
Typical Junction Capacitance (Note 2)
Cj
75
50
pF
Thermal Resistance Junction to Ambient
RqJA
75
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. (See Figure 5)
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