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參數(shù)資料
| 型號(hào)： | SF10MG |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 0K |
| 代理商： | SF10MG |
PR
EL
IM
IN
A
R
Y
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
CJ
@TA
=75 C
@TJ=100 C
SF10KG thru SF10MG
FEATURES
Glass passivated chip
Super fast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25 C
Typical Junction Capacitance (Note1)
1.0
30
1.5
5
100
20
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
75
C/W
pF
uA
V
A
V
UNIT
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B
25.4
5.20
-
4.10
0.71
2.00
2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS
SYMBOL
Maximum Reverse Recovery Time (Note 3)
TRR
1.7
50
ns
SUPER FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE
- 800 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
SF10KG
800
560
800
SF10MG
1000
700
1000
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3.Measured with IF=0.5A,IR=1.0A,IRR=0.25A.
R0JA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 1-PRE, 01-Dec-2000, KDGC02
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