參數(shù)資料
型號: SDT10S60
廠商: INFINEON TECHNOLOGIES AG
英文描述: Silicon Carbide Schottky Diode
中文描述: 碳化硅肖特基二極管
文件頁數(shù): 2/9頁
文件大小: 618K
代理商: SDT10S60
2001-12-04
Page 2
SDP10S30, SDB10S30
SDT10S30
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
-
-
2.3
K/W
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
P-TO263-3-2: @ 6 cm
2
cooling area
1)
-
-
-
35
62
-
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Diode forward voltage
I
F
=10A,
T
j
=25°C
I
F
=10A,
T
j
=150°C
Reverse current
V
F
-
-
1.5
1.5
1.7
1.9
V
V
R
=300V,
T
j
=25°C
V
R
=300V,
T
j
=150°C
I
R
-
-
15
20
200
1000
μA
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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