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參數(shù)資料
| 型號： | SDH02 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Darlington transistors |
| 中文描述： | 1.5 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | SD, SMD, 16 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 22K |
| 代理商： | SDH02 |
166
Characteristic curves
I
C
-V
CE
Characteristics (Typical)
h
FE
-I
C
Characteristics (Typical)
h
FE
-I
C
Temperature Characteristics (Typical)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
V
CE
(sat)-I
B
Characteristics (Typical)
I
C
-V
BE
Temperature Characteristics (Typical)
θ
j-a
-PW Characteristics
P
T
-T
a
Characteristics
Safe Operating Area (SOA)
SDH02
(T
a
=25
°
C)
Symbol
Ratings
Unit
V
CBO
120
V
V
CEO
100
V
V
EBO
6
V
I
C
1.5
A
I
CP
2.5 (PW
≤
1ms, D
u
≤
10%)
0.2
A
I
B
A
I
F
1.5
A
I
FSM
2.5 (PW
≤
0.5ms, D
u
≤
10%)
120
3 (T
a
=25
°
C)
150
A
V
R
V
P
T
W
°
C
°
C
T
j
T
stg
–40 to +150
(T
a
=25
°
C)
Symbol
Unit
Conditions
I
CBO
10
μ
A
mA
V
CB
=120V
I
EBO
3
V
EB
=6V
V
CEO
100
V
I
C
=10mA
h
FE
2000
6000
12000
V
CE
=4V, I
C
=1A
V
CE
(sat)
1.1
1.3
V
V
BE
(sat)
1.7
2.2
V
t
on
0.5
μ
s
μ
s
μ
s
V
CC
30V,
t
stg
4.5
I
C
=1A,
t
f
1.2
I
B1
=–I
B2
=2mA
f
T
50
MHz
V
CE
=12V, I
E
=–0.1A
C
ob
20
pF
V
CB
=10V, f=1MHz
I
C
=1A, I
B
=2mA
(T
a
=25
°
C)
Symbol
Unit
Conditions
V
R
120
V
I
R
=10
μ
A
I
F
=1A
V
F
1.6
V
I
R
10
μ
A
V
R
=120V
t
rr
100
ns
I
F
=
±
100mA
Specification
typ
min
max
Specification
typ
min
max
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
6
V
CE
(V)
I
C
I
B
=10mA
2mA
4mA
1.2mA
0.6mA
0.4mA
0.3mA
10000
5000
1000
500
100
0.03 0.05
0.1
0.5
1
2.5
h
F
(V
CE
=4V)
I
C
(A)
typ
(V
CE
=4V)
10000
5000
1000
500
100
0.03 0.05
0.1
0.5
1
2.5
h
F
I
C
(A)
T
a
=125
°
C
75
°
C
25
°
C
–30
°
C
3
2
1
0
0.2
0.5
1
2.5
(I
C
/ I
B
=1000)
V
C
I
C
(A)
Ta=125
°
C
75
°
C
25
°
C
–30
°
C
3
2
1
0
0.1
0.5
1
5
10
50
100
I
C
=2A
I
C
=1A
I
C
=0.5A
V
C
I
B
(mA)
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
I
C
V
BE
(V)
(V
CE
=4V)
T
a
=5
°
C
7
°
C
2
°
C
–
°
C
50
10
5
1
5
1
10
100
500 1000
50
θ
°
C
PW (mS)
3
2
1
0
0
4
3
2
1
50
100
150
P
T
Ta (
°
C)
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
5
1
0.5
0.1
0.05
0.03
3
5
10
50
100
V
CE
(V)
I
C
Single Pulse
T
a
=25
C
10
μ
s
1s
1m
2
16 15
R
1
R
2
1
4
14 13
3
6
12 11
5
8
10 9
7
NPN Darlington
With built-in flywheel diode
R
1
: 2.5k
typ R
2
: 200
typ
External dimensions
E
SD
Absolute maximum ratings
G
Diode for flyback voltage absorption
I
Equivalent circuit diagram
Electrical characteristics
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