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參數(shù)資料
| 型號： | SDK02 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOS FET Array(N溝道MOS場效應(yīng)管陣列) |
| 中文描述： | 2 A, 60 V, 0.24 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SD, SMD, 16 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 13K |
| 代理商： | SDK02 |
170
Characteristic curves
SDK02
(T
a
=25
°
C)
Symbol
Ratings
Unit
V
DSS
60
V
V
GSS
±
10
±
2
V
I
D
A
I
D(
pulse
)
±
3 (PW
≤
100
μ
s, D
u
≤
1%)
1.5
A
I
F
A
I
FSM
2.5 (PW
≤
0.5ms, D
u
≤
10%)
A
V
R
120
V
P
T
3 (Ta=25
°
C, 4-circuit operation)
W
Tch
150
°
C
°
C
Tstg
–40 to +150
(T
a
=25
°
C)
Symbol
Unit
Conditions
V
(BR)DSS
60
V
I
D
=250
μ
A, V
GS
=0V
V
GS
=
±
10V
I
GSS
±
500
nA
I
DSS
250
μ
A
V
DS
=60V, V
GS
=0V
V
TH
1.0
2.0
V
V
DS
=10V, I
D
=250
μ
A
V
DS
=10V, I
D
=1.0A
Re
(
yfs
)
1.2
S
0.19
0.24
pF
V
GS
=10V, I
D
=1.0A
0.25
0.30
V
GS
=4V, I
D
=1.0A
Ciss
400
V
DS
=25V,
Coss
160
pF
f=1.0MHz,
Crss
35
pF
V
GS
=0V
V
SD
1.0
1.5
V
I
SD
=2A, V
GS
=0V
t
rr
150
ns
I
SD
=
±
100mA
Symbol
Unit
Conditions
V
R
120
V
I
R
=10
μ
A
V
F
1.6
V
I
F
=1A
I
R
100
ns
V
R
=120V
t
rr
100
I
F
=
±
100mA
Specification
typ
min
max
Specification
typ
min
max
R
DS(ON)
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
N-channel
With built-in flywheel diode
External dimensions
E
SD
Absolute maximum ratings
Electrical characteristics
G
Diode for flyback voltage absorption
I
Equivalent circuit diagram
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