參數(shù)資料
型號(hào): SD823C12S30CPBF
元件分類: 整流器
英文描述: 910 A, 1200 V, SILICON, RECTIFIER DIODE
封裝: B-43, 2 PIN
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 214K
代理商: SD823C12S30CPBF
SD823C..C Series
2
Bulletin I2074 rev. D 04/00
www.irf.com
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= T
J
max.
VV
mA
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD823C..C
50
I
F(AV)
Max. average forward current
810 (425) 910 (470)
A
180° conduction, half sine wave
@ heatsink temperature
55 (85)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS forward current
1500
1690
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward,
9300
9600
t = 10ms
No voltage
non-repetitive surge current
9730
10050
t = 8.3ms
reapplied
7820
8070
t = 10ms
100% V
RRM
8190
8450
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
432
460
t = 10ms
No voltage
Initial T
J
= T
J
max.
395
420
t = 8.3ms
reapplied
306
326
t = 10ms
100% V
RRM
279
297
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
4320
4600
KA2
√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level value of threshold
voltage
V
F(TO)2 High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
2.20
1.85
V
I
pk
= 1500A, T
J = TJ max, t
p
= 10ms sinusoidal wave
0.76
0.57
(I >
π x I
F(AV)
),T
J
= T
J
max.
0.80
0.60
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
1.11
1.06
(I >
π x I
F(AV)
),T
J
= T
J
max.
1.00
0.95
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
KA2s
A
V
m
Forward Conduction
Parameter
Units
Conditions
SD823C..C
S20
S30
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Test conditions
Max. values @ T
J
= 150 °C
Recovery Characteristics
Typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
S20
2.0
1000
50
- 50
3.5
240
110
S30
3.0
1000
50
- 50
5.0
380
130
T
J = 25
oC
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