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參數(shù)資料
| 型號： | SD603C22S20C |
| 元件分類： | 整流器 |
| 英文描述： | 600 A, 2200 V, SILICON, RECTIFIER DIODE |
| 封裝： | B-43, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 202K |
| 代理商： | SD603C22S20C |
SD603C..C Series
2
Bulletin I2068 rev. C 04/00
www.irf.com
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Test conditions
Max. values @ T
J
= 125 °C
Recovery Characteristics
typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
T
J = 25
oC
S10
1.0
2.0
45
34
S15
1.5
1000
25
-30
3.2
87
51
S20
2.0
3.5
97
55
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
max. repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
T
J
= 125°C
VV
mA
04
400
500
SD603C..S10C
08
800
900
10
1000
1100
12
1200
1300
SD603C..S15C
14
1400
1500
16
1600
1700
20
2000
2100
22
2200
2300
Parameter
SD603C..C
Units
Conditions
Forward Conduction
KA
2s
A
I
F(AV)
Max. average forward current
600(300)
A
180° conduction, half sine wave.
@ Heatsink temperature
55(75)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS current
942
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle
8320
t = 10ms
No voltage
non-repetitive forward current
8715
t = 8.3ms
reapplied
7000
t = 10ms
100% V
RRM
7330
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2 t
Maximum I
2 t for fusing
346
t = 10ms
No voltage
Initial T
J = TJ max.
316
t = 8.3ms
reapplied
245
t = 10ms
100% V
RRM
224
t = 8.3ms
reapplied
I
2 √t
Maximum I2
√t for fusing
3460
KA
2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level of threshold voltage
1.36
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
V
F(TO)
2
High level of threshold voltage
1.81
(I >
π x I
F(AV)
), T
J
= T
J
max.
r
f1
Low level of forward slope resistance
0.87
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
r
f2
High level of forward slope resistance
0.67
(I >
π x I
F(AV)
), T
J
= T
J
max.
V
FM
Max. forward voltage
2.97
V
I
pk
= 1885A, T
J = 25°C, t
p
= 10ms sinusoidal wave
m
V
SD603C..S20C
45
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