參數(shù)資料
型號(hào)： SD303C25S20C
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 整流器
英文描述： 350 A, 2500 V, SILICON, RECTIFIER DIODE, DO-200AA
封裝： PUK-2
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 204K
代理商： SD303C25S20C
SD303C..C Series
2
Bulletin I2066 rev. C 04/00
www.irf.com
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Test conditions
Max. values @ T
J
= 125°C
Recovery Characteristics
typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
T
J
= 25 oC
S10
1.0
2.4
52
33
S15
1.5
750
25
-30
2.9
90
44
S20
2.0
3.2
107
46
Voltage
V
RRM
max. repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
T
J
= 125°C
VV
mA
04
400
500
SD303C..S10C
08
800
900
10
1000
1100
12
1200
1300
SD303C..S15C
14
1400
1500
16
1600
1700
20
2000
2100
25
2500
2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD303C..S20C
Parameter
SD303C..C
Units
Conditions
I
F(AV)
Max. average forward current
350(175)
A
180° conduction, half sine wave.
@ Heatsink temperature
55(75)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS current
550
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle
5770
t = 10ms
No voltage
non-repetitive forward current
6040
t = 8.3ms
reapplied
4850
t = 10ms
100% V
RRM
5080
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2 t
Maximum I
2t for fusing
166
t = 10ms
No voltage
Initial T
J = TJ max.
152
t = 8.3ms
reapplied
117
t = 10ms
100% V
RRM
107
t = 8.3ms
reapplied
I
2 √t
Maximum I2
√t for fusing
1660
KA
2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level of threshold voltage
1.14
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
V
F(TO)
2
High level of threshold voltage
1.63
(I >
π x I
F(AV)
), T
J
= T
J
max.
r
f1
Low level of forward slope resistance
1.14
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
r
f2
High level of forward slope resistance
0.77
(I >
π x I
F(AV)
), T
J
= T
J
max.
V
FM
Max. forward voltage
2.26
V
I
pk
= 1100A, T
J = 25°C, t
p
= 10ms sinusoidal wave
Forward Conduction
KA
2s
A
m
V
35
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