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參數(shù)資料
| 型號(hào)： | SD210DE-2 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Lateral DMOS FET(最小漏源擊穿電壓30V的N溝道增強(qiáng)型MOSFET) |
| 中文描述： | N溝道場(chǎng)效應(yīng)管外側(cè)的DMOS（最小漏源擊穿電壓30V的的N溝道增強(qiáng)型MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | SD210DE-2 |
SD210DE-2/214DE-2
Vishay Siliconix
Document Number: 70294
S-02889—Rev. E, 21-Dec-00
www.vishay.com
1
N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
Part Number
V
(BR)DS
Min (V)
V
GS(th)
Max (V)
r
DS(on)
Max ( )
C
rss
Max (pF)
t
ON
Max (ns)
SD210DE-2
30
1.5
45 @ V
GS
= 10 V
0.5
2
SD214DE-2
20
1.5
45 @ V
GS
= 10 V
0.5
2
Ultra-High Speed Switching—t
ON
: 1 ns
Ultra-Low Reverse Capacitance: 0.2 pF
Low Guaranteed r
DS
@ 5 V
Low Turn-On Threshold Voltage
N-Channel Enhancement Mode
High Speed System Performance
Low Insertion Loss at High Frequencies
Low Transfer Signal Loss
Simple Driver Requirement
Single Supply Operation
Fast Analog Switch
Fast Sample-and-Holds
Pixel-Rate Switching
DAC Deglitchers
High-Speed Driver
The SD210DE-2/214DE-2 are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video, and
high-frequency applications. The SD214DE-2 is normally used
for
10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and
capability from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
voltage
The SD210DE/214DE are available only in the “–2” extended
hi-rel flow. The Vishay Siliconix “–2” flow complies with the
requirements of MIL-PRF-19500 for JANTX discrete devices.
For similar products see: quad array—SD5000I-2, and Zener
protected—SD211DE-2/213DE-2/215DE-2.
G
Top View
S
D
TO-206AF
(TO-72)
Body
Substrate
(Case)
1
2
3
4
Gate-Drain, Gate-Source Voltage
40 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Substrate Voltage
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain-Source Voltage
SD210DE-2
SD214DE-2)
30 V
20 V
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
Source-Drain Voltage
SD210DE-2
SD214DE-2
10 V
20 V
Drain-Substrate Voltage
SD210DE-2
SD214DE-2
30 V
25 V
Source-Substrate Voltage
SD210DE-2
SD214DE-2
15
V
25 V
50 mA
300 C
Drain Current
Lead Temperature (
1
/
16
” from case for 10 seconds)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
–65 to 150 C
–55 to 125 C
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Derate 3 mW/ C above 25 C
Applications Information—See Applications Note AN502
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SD214DE-2 | N-Channel Lateral DMOS FET(最小漏源擊穿電壓20V的N溝道增強(qiáng)型MOSFET) |
| SD211DE-2 | N-Channel Lateral DMOS FET(最小漏源擊穿電壓30V的N溝道增強(qiáng)型MOSFET) |
| SD215DE-2 | N-Channel Lateral DMOS FET(最小漏源擊穿電壓20V的N溝道增強(qiáng)型MOSFET) |
| SD213DE-2 | N-Channel Lateral DMOS FET(最小漏源擊穿電壓10V的N溝道增強(qiáng)型MOSFET) |
| SD5000I-2 | N-Channel Lateral DMOS FET(最小漏源擊穿電壓20V，最大閾值電壓1.5V的N溝道增強(qiáng)型MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SD210DE-2L | 制造商:Vishay Semiconductors 功能描述:SD210DE-2 WITH SOLDER LEADS |
| SD210DET | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS |
| SD210E | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:High-Speed Analog N-Channel DMOS FETs |
| SD210EE | 制造商:NXP Semiconductors 功能描述: |
| SD211 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS |
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