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參數(shù)資料
| 型號： | SD215DE-2 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Lateral DMOS FET(最小漏源擊穿電壓20V的N溝道增強型MOSFET) |
| 中文描述： | N溝道場效應(yīng)管外側(cè)的DMOS（最小漏源擊穿電壓20V的的N溝道增強型MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 41K |
| 代理商： | SD215DE-2 |
SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
Document Number: 70295
S-02889—Rev. G, 21-Dec-00
www.vishay.com
1
N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
Part Number
V
(BR)DS
Min (V)
V
GS(th)
Max (V)
r
DS(on)
Max ( )
C
rss
Max (pF)
t
ON
Max (ns)
SD211DE-2
30
1.5
45 @ V
GS
= 10 V
45 @ V
GS
= 10 V
45 @ V
GS
= 10 V
0.5
2
SD213DE-2
10
1.5
0.5
2
SD215DE-2
20
1.5
0.5
2
Ultra-High Speed Switching—t
ON
: 1 ns
Ultra-Low Reverse Capacitance: 0.2 pF
Low Guaranteed r
DS
@ 5 V
Low Turn-On Threshold Voltage
N-Channel Enhancement Mode
High Speed System Performance
Low Insertion Loss at High Frequencies
Low Transfer Signal Loss
Simple Driver Requirement
Single Supply Operation
Fast Analog Switch
Fast Sample-and-Holds
Pixel-Rate Switching
DAC Deglitchers
High-Speed Driver
The SD211DE-2 series consists of enhancement- mode
MOSFETs designed for high speed low-glitch switching in
audio, video, and high-frequency applications. The
SD211DE-2 may be used for
high speed driver of the SD214DE-2. The SD214DE-2 is
normally used for
10-V analog switching. These MOSFETs
utilize lateral construction to achieve low capacitance and
ultra-fast switching speeds. An integrated Zener diode
5-V analog switching or as a
provides ESD protection. These devices feature a poly-silicon
gate for manufacturing reliability.
The SD211DE/213DE/215DE are available only in the “–2”
extended hi-rel flow. The Vishay Siliconix “–2” flow complies
with the requirements of MIL-PRF-19500 for JANTX discrete
devices.
Top View
G
S
D
TO-206AF
(TO-72)
Body
Substrate
(Case)
1
2
3
4
Gate-Drain, Gate-Source Voltage
(SD211DE-2)
(SD213DE-2)
(SD215DE-2)
–30/25 V
–15/25 V
–25/30 V
. . . . . . . . . . . . . .
. . . . . . . . . . . . .
. . . . . . . . . . . . .
Gate-Substrate Voltage (Derate 3 mW/ C above 25 C)
(SD211DE-2)
(SD213DE-2)
(SD215DE-2)
(SD211DE-2)
(SD213DE-2)
(SD215DE-2)
(SD211DE-2)
(SD213DE-2)
(SD215DE-2)
–0.3/25 V
–0.3/25 V
–0.3/30 V
30 V
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
Drain-Source Voltage
10 V
20 V
10 V
10 V
20 V
Source-Drain Voltage
Drain-Substrate Voltage
(SD211DE-2)
(SD213DE-2)
(SD215DE-2)
30 V
15 V
25 V
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
Source-Substrate Voltage
(SD211DE-2)
(SD213DE-2)
(SD215DE-2)
15 V
15 V
25 V
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
Drain Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 seconds)
300 C
. . . . . . . . . . . . . . . .
Storage Temperature
–65 to 150 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 125 C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Derate 3 mW/ C above 25 C)
300 mW
. . . . . . . . . . . . . . . .
Applications Information—See Applications Note AN502
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