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參數(shù)資料
| 型號(hào)： | SD1541-01 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| 中文描述： | 射頻 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | SD1541-01 |
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (M112)
hermetically sealed
ORDER CODE
SD1541-01
.
DESIGNED FOR HIGH POWER PULSED
IFF AND DME APPLICATIONS
.
400 (min.) DME 1025 - 1150 MHz
.
6.5 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.
30:1 LOAD VSWR CAPABILITY AT
SPECIFICIED OPERATING CONDITIONS
.
INPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATION
DESCRIPTION
The SD1541-01 is a hermetically sealed, gold me-
tallized, silicon NPNpower transistor. TheSD1541-
01 is designed for applications requiring high peak
power and low duty cycles such as DME. The
SD1541-01 is packaged in a hermetic metal/ce-
ramic package with internal input/output matching,
resulting in improved broadband performance and
a low thermal resistance.
PIN CONNECTION
BRANDING
SD1541-1
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
65
65
3.5
V
V
V
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
22
A
W
°
C
°
C
1458
+200
65 to +150
R
TH(j-c)
Junction-Case Thermal Resistance
0.12
°
C/W
SD1541-01
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
November 1992
1/5
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