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參數(shù)資料
| 型號(hào)： | SD1680 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors(RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | SD1680 |
800/900 MHz APPLICATIONS
RF & MICROWAVE TRANSISTORS
2 x .437 x .450 2LFL (M175)
epoxysealed
ORDER CODE
SD1680
.
915 - 960 MHz
.
24 VOLTS
.
CLASS AB PUSH PULL
.
INTERNAL INPUT MATCHING
.
DESIGNED FOR HIGH POWER LINEAR
OPERATION
.
HIGH SATURATED POWER CAPABILITY
.
GOLD METALLIZATION FOR HIGH
RELIABILITY
.
DIFFUSED EMITTER BALLAST
RESISTORS
.
COMMON EMITTER CONFIGURATION
.
P
OUT
=
100 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
The SD1680 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station applications.
PIN CONNECTION
BRANDING
SD1680
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
30
3.0
V
V
V
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
25
310
+200
A
W
°
C
°
C
55 to +150
R
TH(j-c)
Junction-Case Thermal Resistance
0.55
°
C/W
SD1680
1. Collector
2. Base
3. Emitter
THERMAL DATA
November 1992
1/7
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