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參數(shù)資料
| 型號： | SC1405TS.TR |
| 廠商： | Semtech Corporation |
| 英文描述： | HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER |
| 中文描述： | 高速同步功率MOSFET的智能驅(qū)動 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 133K |
| 代理商： | SC1405TS.TR |
SC1405
HIGH SPEED SYNCHRONOUS POWER
MOSFET SMART DRIVER
2000 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
August 31, 2000
4
ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS) Cont.
PARAMETER
SYMBOL
AC OPERATING SPECIFICATIONS
CONDITIONS
MIN
TYP
MAX
UNITS
HIGH-SIDE DRIVER
rise time
tr
TG
,
CI = 3nF, V
BST
- V
DRN
= 4.6V,
16
25
ns
fall time
tf
TG
CI = 3nF, V
BST
- V
DRN
= 4.6V,
17
27
ns
propagation delay time,
TG going high
tpdh
TG
CI = 3nF, V
- V
= 4.6V,
C-delay=0
35
56
ns
propagation delay time,
TG going low
tpdl
TG
CI = 3nF, V
BST
- V
DRN
= 4.6V,
25
40
ns
LOW-SIDE DRIVER
rise time
tr
BG
CI = 3nF, V
V_5
= 4.6V,
20
32
ns
fall time
tr
BG
CI = 3nF, V
V_5
= 4.6V,
18
29
ns
propagation delay time
BG going high
tpdh
BGHI
CI = 3nF, V
V_5
= 4.6V,
DRN < 1V
45
72
ns
progagation delay time
BG going low
tpdl
BG
CI = 3nF, V
V_5
= 4.6V,
12
20
ns
UNDER-VOLTAGE LOCKOUT
V_5 ramping up
tpdh
UVLO
tpdl
UVLO
EN is High
10
us
V_5 ramping down
EN is High
10
us
PRDY
EN is transitioning from low to
high
tpdhPRDY
V_5 > UVLO threshold, Delay
measured from EN > 2.0V to
PRDY > 3.5V
10
μs
EN is transitioning from high to
low
tpdh
UVLO
V_5 > UVLO threshold. Delay
measured from EN < 0.8V tp
PRDY < 10% of V_5
500
μs
DSPS_DR
rise/fall time
tr
DSPS_DR,
tf
DSPS_DR
tpdh
DSPS_DR
CI = 100pf, V_5 = 4.6V,
20
ns
propagation delay,
DSPS_DR going high
S_MOD goes high and
BG goes high or S_MOD goes low
10
ns
propagation delay
DSPS_DR goes low
tpdl
DSPS_DR
S_MOD goes high and BG goes
low
10
ns
OVERVOLTAGE PROTECTION
propagation delay
OVP_S going high
tpdh
OVP_S
V_5 = 4.6V, T
= 125°C, OVP_S >
1.2V to BG > 90% of V_5
1
μs
Note:
(1) This device is ESD sensitive. Use of standard ESD handling precautions is required.
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