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參數(shù)資料
| 型號(hào)： | SC1405TS.TR |
| 廠(chǎng)商： | Semtech Corporation |
| 英文描述： | HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER |
| 中文描述： | 高速同步功率MOSFET的智能驅(qū)動(dòng) |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | SC1405TS.TR |
SC1405
HIGH SPEED SYNCHRONOUS POWER
MOSFET SMART DRIVER
2000 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
August 31, 2000
3
ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS) Cont.
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
OVERVOLTAGE PROTECTION
Trip Threshold
V
TRIP
Vhys
OVP
1.145
1.2
1.255
V
Hysteresis
0.8
V
S_MOD
High Level Input Voltage
V
IH
V
IL
2.0
V
Low Level Input Voltage
0.8
V
ENABLE
High Level Input Voltage
V
IH
V
IL
2.0
V
Low Level Input Voltage
0.8
V
CO
High Level Input Voltage
V
IH
V
IL
2.0
V
Low Level Input Voltage
0.8
V
THERMAL SHUTDOWN
Over Temperature Trip Point
T
OTP
T
HYST
165
°C
Hysteresis
10
°C
HIGH-SIDE DRIVER
Peak Output Current
I
PKH
Rsrc
TG
1.5
A
Output Resistance
Rsink
TG
duty cycle < 2%, tpw < 100μs,
T
J
= 125°C, V
BST
- V
DRN
= 4.5V,
V
TG
= 4.0V (src)+V
DRN
or V
TG
= 0.5V (sink)+V
DRN
1.4
1.4
LOW-SIDE DRIVER
Peak Output Current
I
PKL
2
A
Output Resistance
Rsrc
BG
Rsink
BG
duty cycle < 2%, tpw < 100μs,
T
J
= 125°C
V
V_5
= 4.6V, V
BG
= 4V (src),
or V
LOWDR
= 0.5V (sink)
2
2
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