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參數(shù)資料
| 型號： | SBYV26C/23 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 330K |
| 代理商： | SBYV26C/23 |
www.vishay.com
2
Document Number 88735
24-Oct-05
SBYV26C
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on P.C.B.
with 0.5 x 0.5" (12 x 12 mm) copper pads
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
Value
Unit
Minimum avalanche
breakdown voltage
at 100 A
VBR
600
V
Maximum instantaneous
forward voltage
at 1.0 A
TJ = 25 °C
TJ = 175 °C
VF
2.5
1.3
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 165 °C
IR
5.0
150
A
Max. reverse recovery time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
30
ns
Maximum junction
capacitance
at 4.0 V, 1 MHz
CJ
45
pF
Maximum reverse recovery
current slope
at IF = 1 A, VR = 30 V, dif/dt = - 1 A/s
dir/dt
7.0
A/s
Parameter
Symbol
Value
Unit
Typical thermal resistance (1,2)
RθJA
RθJL
70
16
°C/W
Figure 1. Maximum Forward Current Derating Curve
0
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
A
v
erage
F
or
w
ard
Rectified
C
u
rrent
(A)
Temperature (°C)
0.4
0.2
Mounted on P.C.B.
Lead mounted on
heatsink
TL
TA
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
1
100
10
P
e
ak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
TJ = TJ max.
10 ms Single Half Sine-Wave
Number of Cycles at 50 Hz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SBYV26C-HE3 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26C-E3/51 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26CHE3/73 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26C-E3/73 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26C-HE3/54 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SBYV26C-E3/1 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV26C-E3/23 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV26C-E3/4 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV26C-E3/51 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV26C-E3/54 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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