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參數(shù)資料
| 型號： | SBYV26C/23 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 330K |
| 代理商： | SBYV26C/23 |
SBYV26C
Document Number 88735
24-Oct-05
Vishay General Semiconductor
www.vishay.com
1
Pat
ente
d*
DO-204AL (DO-41)
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
600 V
IFSM
30 A
trr
30 ns
VF
1.3 V
Tj max.
175 °C
Features
Cavity-free glass-passivated junction
Ideal for printed circuit boards
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Mechanical Data
Case: DO-204AL, molded plastic over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Notes:
(1) Peak reverse energy measured with 8/20 s surge
Parameter
Symbol
Value
Unit
Maximum repetitive peak reverse voltage
VRRM
600
V
Maximum RMS voltage
VRMS
420
V
Maximum DC blocking voltage
VDC
600
V
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at TL = 85 °C (See Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Non repetitive peak reverse energy (1)
ERSM
5.0
mJ
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SBYV26C-HE3 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26C-E3/51 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26CHE3/73 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26C-E3/73 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV26C-HE3/54 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SBYV26C-E3/1 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV26C-E3/23 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV26C-E3/4 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV26C-E3/51 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV26C-E3/54 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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