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參數(shù)資料
| 型號： | SBR30U30CT |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 30A SBR㈢ Super Barrier Rectifier |
| 中文描述： | 30 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 243K |
| 代理商： | SBR30U30CT |
SBR30U30CT
30A SBR
Super Barrier Rectifier
Features
Mechanical Data
N
Ultra Low Forward Voltage Drop
Excellent High Temperature Stability
Superior Reverse Avalanche Capability
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150°C Operating Junction Temperature
Plastic TO-220AB package
Lead Free Finish, RoHS Compliant (Note 2)
Case Material: Molded Plastic, UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Matte Tin Finish annealed over
Copper leadframe. Solderable per MIL-STD-202,
Method 208
Marking: See Page 3
Ordering Information: See Page 3
Maximum Ratings
@ T
A
= 25oC unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ T
C
= 140oC
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Avalanche Energy
(T
J
= 25oC, I
AS
= 20A, L = 8.5 mH)
Repetitive Peak Avalanche Power
(1μs, 25oC)
Operating and Storage Temperature Range
Electrical Characteristics
@ T
A
= 25oC unless otherwise specified
Symbol
V
RRM
V
RWM
V
RM
V
R(RMS)
I
O
Value
Unit
30
V
21
30
V
A
I
FSM
280
A
E
AS
800
mJ
P
ARM
9800
W
T
J
, T
STG
-65 to +150
oC
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V
(BR)R
30
-
-
V
I
R
= 1.5 mA
Forward Voltage Drop (per leg)
V
F
-
0.41
0.50
0.34
—
0.45
0.54
0.37
0.5
V
I
F
= 15A, T
J
= 25oC
I
F
= 30A,T
J
= 25oC
I
F
= 15A, T
J
= 125oC
I
F
= 30A,T
J
= 125oC
Leakage Current (Note 1)
I
R
-
0.33
40
1.5
100
mA
V
R
= 30V, T
J
= 25 oC
V
R
= 30V, T
J
= 125 oC
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. RoHS revision 13.2.2003. High temperature solder exemption applied, see
EU Directive Annex Note 7.
__________
SBR is a registered trademark of Diodes Incorporated.
SBR30U30 Rev. 3 - 2
1 of 3
www.diodes.com
May 2007
Diodes Incorporated
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