參數(shù)資料
型號(hào): SB5120
廠商: LITE-ON SEMICONDUCTOR CORP
元件分類: 整流器
英文描述: 5 A, 120 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 2/3頁
文件大?。?/td> 128K
代理商: SB5120
RATING AND CHARACTERISTIC CURVES
SB5120
FIG.1- FORWARD CURRENT DERATING CURV E
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
CASE TEMPERATURE, (
℃)
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.2- MAXIMUM NON-REPETITIVE SURGE
CURRENT
0
50
100
150
1
10
100
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,(
A
)
FIG.3- TYPICAL JUNCTION CAPACITANCE
10
100
1000
1
10
100
REVERSE VOLT AGE, VOLTAGES
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
0.01
0.1
1
10
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
INSTANTANEOUS FORWARD VOLTAGE, VOLT S
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
FIG.5- TYPICAL RE VERSE CHARACTERISTICS
0.0001
0.001
0.01
0.1
1
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,
(m
A
)
FIG.6- DC REVERSE VOLTAGE DERATING CURVE
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE, (
℃)
P
E
R
C
E
N
T
O
F
D
C
R
E
V
E
R
S
E
V
O
L
T
A
G
E
,
(%
)
Tj=25℃
PULSE WIDTH 300us
2% Duty Cycle
Tj=25℃, f=1MHz
8.3ms Single Half Sine-Wave
Tj=125℃
Mounted pad on glass-epoxy
substrate with 1oz/ft
2_
5mm
Through hole diameter_1.5mm
Rthj-a=27
/W
Tj=25℃
Tj=125℃
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