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參數(shù)資料
| 型號(hào)： | SB3H90HE3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 326K |
| 代理商： | SB3H90HE3 |
SB3H90 & SB3H100
Document Number 88720
28-Jun-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
TJ = 100 °C
TJ = 150 °C
TJ = 125 °C
TJ = 175 °C
TJ = 25 °C
Pulse Width = 300 s
1% Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
20
40
60
80
100
0.01
0.1
1
10
100
1000
TJ = 100 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
100
1000
0.1
10
1
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.1
1
10
0.1
10
1
100
0
t - Pulse Duration (sec.)
T
ransient
Ther
mal
Impedance
(°C/
W
)
0.210 (5.3)
0.190 (4.8)
Dia.
0.052 (1.32)
0.048 (1.22)
Dia.
1.0 (25.4)
Min.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
DO-201AD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SB3H90-E3 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100-E3 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90-HE3/54 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100-HE3/73 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100-E3/51 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
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