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參數(shù)資料
| 型號(hào)： | SB3H90HE3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 326K |
| 代理商： | SB3H90HE3 |
www.vishay.com
2
Document Number 88720
28-Jun-05
SB3H90 & SB3H100
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
SB3H90
SB3H100
Unit
Maximum instantaneous forward
voltage at: (1)
IF = 3.0 A,
TJ = 25 °C
TJ = 125 °C
VF
0.80
0.65
V
Maximum DC reverse current at
rated DC blocking voltage
TJ = 25 °C
TJ = 125 °C
IR
20
4.0
A
mA
Parameter
Symbol
SB3H90
SB3H100
Unit
Maximum thermal resistance(1)
RθJA
RθJL
50
20
°C/W
Figure 1. Forward Current Derating Curve
0
25
50
75
100
125
150
175
0
1.0
2.0
3.0
4.0
Resistive or Inductive Load
0.375” (9.5 mm) lead length
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
20
10
40
60
80
100
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SB3H90-E3 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100-E3 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90-HE3/54 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100-HE3/73 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100-E3/51 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
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