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參數資料
| 型號： | SB3H90HE3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 66K |
| 代理商： | SB3H90HE3/54 |
Document Number: 88720
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 04-Aug-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
SB3H90, SB3H100
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
Pulse Width = 300 μs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
In
s
tantaneou
s
Forwar
d
Curr
ent
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
T
J = 100 °C
T
J = 175 °C
20
40
60
80
100
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e
Curr
ent
(μA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
T
J = 100 °C
100
1000
0.1
10
1
10
100
Reverse Voltage (V)
Junction
Capacitanc
e
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.1
1
10
0.1
10
1
100
0
t - Pulse Duration (s)
Tr
a
n
s
ient
Thermal
Impedance
(°C/W)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
相關PDF資料 |
PDF描述 |
|---|---|
| SB3H100-E3/73 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100HE3/54 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100E3 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90HE3 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90-E3 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
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