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參數(shù)資料
| 型號： | SB3H90HE3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 66K |
| 代理商： | SB3H90HE3/54 |
Document Number: 88720
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 04-Aug-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
SB3H90, SB3H100
Vishay General Semiconductor
New Product
FEATURES
Guardring for overvoltage protection
Low power losses and high efficiency
Low forward voltage drop
Low leakage current
High forward surge capabilitmy
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
90 V, 100 V
IFSM
100 A
VF
0.65 V
IR
20 μA
TJ max.
175 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB3H90
SB3H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum working reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TL = 90 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
IRRM
1.0
A
Critical rate of rise of reverse voltage
dV/dt
10 000
V/μs
Storage temperature range
TSTG
- 55 to + 175
°C
Maximum operating junction temperature
TJ
175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SB3H100-E3/73 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100HE3/54 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H100E3 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90HE3 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SB3H90-E3 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
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