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參數(shù)資料
| 型號(hào)： | SB1H90-E3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 90 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, DO-41, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 66K |
| 代理商： | SB1H90-E3/54 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88716
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 04-Aug-09
SB1H90, SB1H100
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note
(1) P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Typical Instantaneous Forward Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB1H90
SB1H100
UNIT
Maximum instantaneous forward voltage
IF = 1.0 A
TJ = 25 °C
VF (1)
0.77
V
TJ = 125 °C
0.62
IF = 2.0 A
TJ = 25 °C
0.86
TJ = 125 °C
0.70
Maximum reverse current at rated VR
TJ = 25 °C
IR (2)
1.0
μA
TJ = 125 °C
0.5
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB1H90
SB1H100
UNIT
Maximum thermal resistance
RθJA
(1)
57
°C/W
RθJL
(1)
15
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SB1H100-E3/54
0.34
54
5500
13" diameter paper tape and reel
SB1H100-E3/73
0.34
73
3000
Ammo pack packaging
SB1H100HE3/54 (1)
0.34
54
5500
13" diameter paper tape and reel
SB1H100HE3/73 (1)
0.34
73
3000
Ammo pack packaging
0
0.6
0.8
1.0
50
25
75
100
125
150
175
Average
Forward
Current
(A)
Case Temperature (°C)
0.4
0.2
1.2
200
0.2
0
0.4
0.8
1.0
0.01
0.1
10
1
1.2
0.6
1.4
1.6
1.8
100
Instantaneous Forward Voltage (V)
In
s
tantaneou
s
Forwar
d
Curr
e
nt
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
T
J = 100 °C
T
J = 175 °C
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