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參數(shù)資料
| 型號： | SB1H90-E3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 90 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, DO-41, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 66K |
| 代理商： | SB1H90-E3/54 |
Document Number: 88716
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 04-Aug-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
SB1H90, SB1H100
Vishay General Semiconductor
New Product
FEATURES
High barrier technology for improved high TJ
Guardring for overvoltage protection
Low power losses and high efficiency
Low forward voltage drop
Very low leakage current
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
90 V, 100 V
IFSM
50 A
VF
0.62 V
IR
1.0 μA
TJ max.
175 °C
DO-204AL (DO-41)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB1H90
SB1H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum RMS voltage
VRMS
63
70
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
IRRM
1.0
A
Maximum operating junction temperature
TJ
175
°C
Storage temperature range
TSTG
- 55 to + 175
°C
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| SB20150FCT | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
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