參數(shù)資料
型號: SAP10N
廠商: SANKEN ELECTRIC CO LTD
元件分類: 功率晶體管
英文描述: Darlington Transistors With Built-in Temperature Compensation Diodes for Audio Amplifier Applications(內(nèi)置溫度補(bǔ)償二極管的達(dá)林頓晶體管(用于音頻放大器))
中文描述: 12 A, 150 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 4/6頁
文件大?。?/td> 135K
代理商: SAP10N
1.0
10.0
5.0
0
500
1000
1500
V
F
(mV)
I
F
(
I
F –
V
F
Characteristics
2000
2500
3000
PN-Di
SBD
(5 diodes Total)
PN–Di+SBD
3. Characteristics of the temperature compensation diodes
The several temperature compensation diodes are connected in series, so the forward voltage is varied with
small current fluctuations. Therefore, in case the forward current flowing over the diodes is set at 2.5mA and
over, the forward voltage rises, and in the worst combinations, the idling current reaches to 40mA and over
with minimum VR of 0
. On the contrary, in case the forward current is set at 2.5mA or below, the idling
current may not reach to 40mA with maximum VR of 200
.
4. Parallel push-pull application
Adjustments of the idling current are required by each the resistor in parallel push-pull applications. One
side adjustment will cause the idling current to be unstable (seesaw operation) because of the different h
FE
.
Ta=25
°
C
To be adjusted individually
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