參數(shù)資料
型號: SAP10N
廠商: SANKEN ELECTRIC CO LTD
元件分類: 功率晶體管
英文描述: Darlington Transistors With Built-in Temperature Compensation Diodes for Audio Amplifier Applications(內(nèi)置溫度補(bǔ)償二極管的達(dá)林頓晶體管(用于音頻放大器))
中文描述: 12 A, 150 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 3/6頁
文件大小: 135K
代理商: SAP10N
Di V
F
Variations
TR V
BE
Variations
V
BE
V
BE
Min.
(P and N: h
FE
Max.)
V
BE
Max.
(P and N: h
FE
Min.)
I
C
40mA
V
F
=500mV
2. External Variable Resistor
Total forward voltage (at I
F
=2.5mA) of the diodes is designed to be equal or less than that of total V
BE
(at I
C
= 40mA) of the transistor, thus the idling current is required to be adjusted at 40mA with an additional
external variable resistor.
The relations are shown as below:
Total V
F
of Diode Total V
BE
of Transistor + Total V
RE
of Emitter Resistor
V=0 to 500mV
The V
BE
of the transistor is dependent to the h
FE
, and the V
BE
is lower with higher h
FE
and vice versa. The
h
FE
for both the PNP and the NPN varies between 5k and 20k; thus the V
BE
is the lowest with the
combination of maximum h
FE
(20k) each and it is the highest with the combination of minimum h
FE
(5k)
each.
Presuming the voltage difference between the V
F
of the diodes and the V
BE
of the transistors (including the
total voltage drops of the two emitter resistors) as
V.
Minimum V
BE
– Maximum V
F
variations of the diodes = 0
Maximum V
BE
– Minimum V
F
variations of the diodes = 500mV
The current flowing over the diodes and the VR is adjusted at 2.5mA; therefore
500mV 2.5mA = 200
Consequently, the applicable VR value is to be 0 to 200
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