參數(shù)資料
型號(hào): SA8027DH
廠商: NXP SEMICONDUCTORS
元件分類: XO, clock
英文描述: 2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer
中文描述: PLL FREQUENCY SYNTHESIZER, 2500 MHz, PDSO20
封裝: PLASTIC, TSSOP-20
文件頁(yè)數(shù): 7/22頁(yè)
文件大?。?/td> 231K
代理商: SA8027DH
Philips Semiconductors
Product data
SA8027
2.5 GHz low voltage, low power
RF fractional-N/IF integer frequency synthesizer
2001 Aug 21
7
CHARACTERISTICS
(continued)
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Phase noise (condition R
SET
= 7.5 k
, CP = 00)
Synthesizer’s contribution to close-in phase noise
of 900 MHz RF signal at 1 kHz offset.
GSM
f
REF
= 13MHz, TCXO,
f
COMP
= 1MHz
indicative, not tested
–90
dBc/Hz
Synthesizer’s contribution to close-in phase noise
of 1800 MHz RF signal at 1 kHz offset.
–83
dBc/Hz
(f)
Synthesizer’s contribution to close-in phase noise
of 800 MHz RF signal at 1 kHz offset.
TDMA
f
REF
= 19.44MHz, TCXO,
f
COMP
= 240kHz
indicative, not tested
–85
dBc/Hz
Synthesizer’s contribution to close-in phase noise
of 2100 MHz RF signal at 1 kHz offset.
–77
dBc/Hz
Interface logic input signal levels
V
IH
HIGH level input voltage
0.7*V
DD
V
DD
+0.3
V
V
IL
LOW level input voltage
–0.3
0.3*V
DD
V
I
LEAK
Input leakage current
logic 1 or logic 0
–0.5
+0.5
μ
A
Lock detect output signal (in push/pull mode)
V
OL
LOW level output voltage
I
sink
= 2 mA
0.4
V
V
OH
NOTES:
HIGH level output voltage
I
source
= –2 mA
V
DD
–0.4
V
1.
I
SET
V
SET
R
SET
bias current for charge pumps
2. The relative output current variation is defined as:
I
OUT
I
OUT
|I
2
2
(I
2
I
1
)
I
1
|; with I
1
@ V
1
0.6 V, I
2
@ V
2
V
DDCP
–0.7 V (See Figure 5.)
I
2
I
1
I
2
I
1
V
1
V
2
CURRENT
V
PH
SR00602
I
ZOUT
VOLTAGE
Figure 5.
Relative Output Current Variation
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